sd101aw-v, sd101bw-v, sd101cw-v document number 85679 rev. 1.6, 05-aug-10 vishay semiconductors www.vishay.com 1 17431 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal schottky diodes features ? for general purpose applications ? the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing and coupling diodes for fast switching and low logic level applications ? the sd101 series is a metal-on-silicon schottky barrier device which is protected by a pn junction guard ring ? these diodes are also available in the mini-melf case with type designations ll101a to ll101c, in the do-35 case with type designations sd101a to sd101c and in the sod-323 case with type designations sd101aws-v to sd101cws-v ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sod-123 weight: approx. 10.3 mg packaging codes/options: gs18/10 k per 13" reel (8 mm tape), 10 k/box gs08/3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code type marking remarks sd101aw-v sd101aw-v-gs18 or sd101aw-v-gs08 sa tape and reel sd101bw-v sd101bw-v-gs18 or sd101bw-v-gs08 sb tape and reel sd101cw-v sd101cw-v-gs18 or sd101cw-v-gs08 sc tape and reel parameter test condition part symbol value unit peak reverse voltage sd101aw-v v rrm 60 v sd101bw-v v rrm 50 v sd101cw-v v rrm 40 v power dissipation (infinite heatsink) p tot 400 1) mw forward continuous current i f 30 ma maximum single cycle surge 10 s square wave i fsm 2a
www.vishay.com 2 document number 85679 rev. 1.6, 05-aug-10 sd101aw-v, sd101bw-v, sd101cw-v vishay semiconductors for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified 1) valid provided that electrodes are kept at ambient temperature electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit thermal resistance junction to ambient air r thja 300 1) k/w junction temperature t j 125 1) c storage temperature range t stg - 65 to + 150 c parameter test condition part symbol min ty p. max unit reverse breakdown voltage i r = 10 a sd101aw-v v (br) 60 v sd101bw-v v (br) 50 v sd101cw-v v (br) 40 v leakage current v r = 50 v sd101aw-v i r 200 na v r = 40 v sd101bw-v i r 200 na v r = 30 v sd101cw-v i r 200 na forward voltage drop i f = 1 ma sd101aw-v v f 410 mv sd101bw-v v f 400 mv sd101cw-v v f 390 mv i f = 15 ma sd101aw-v v f 1000 mv sd101bw-v v f 950 mv sd101cw-v v f 900 mv diode capacitance v r = 0 v, f = 1 mhz sd101aw-v c d 2pf sd101bw-v c d 2.1 pf sd101cw-v c d 2.2 pf reverse recovery time i f = i r = 5 ma, recover to 0.1 i r t rr 1ns figure 1. typical variation of forward current vs. forward voltage 0.01 0.1 1 10 0 0.4 0.6 0. 8 1.0 0.2 a b c i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 477 figure 2. typical forward conduction curve a b c 0 0.4 0.6 0. 8 1.0 0.2 60 20 8 0 40 0 100 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) 1 8 47 8
sd101aw-v, sd101bw-v, sd101cw-v document number 85679 rev. 1.6, 05-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com package dimensions in millimeters (inches): sod-123 figure 3. typical variation of reverse current at various temperatures 100 10 1 0.1 0.01 10 20 30 40 050 75 c 50 c 25 c 125 c 100 c v r -re v erse v oltage ( v ) i-re v erse c u rrent ( a) r 1 8 479 figure 4. typical capacitance curve as a function of reverse voltage 1 8 4 8 0 10 20 30 40 0 0 1.0 1.2 1.4 1.6 1. 8 2.0 0.6 0. 8 0.2 0.4 50 t j = 25 c c b a c - typical capacitance (pf) d v r -re v erse v oltage ( v ) 0.1 (0.004) max. 2. 8 5 (0.112) 2.55 (0.100) 3. 8 5 (0.152) 3.55 (0.140) 1.7 (0.067) 1.40 (0.055) mo u nting pad layo u t 2.5 (0.09 8 ) 0. 8 5 (0.033) 0. 8 5 (0.033) 0. 8 5 (0.033) cathode b ar 0.65 (0.026) 0.45 (0.01 8 ) 0.10 (0.004) 1 (0.039) 0.15 (0.006) 1.35 (0.053) 0.2 (0.00 8 ) 0 to 8 0.45 (0.01 8 ) 0.25 (0.010) 0.5 (0.020) ref. re v . 4 - date: 24. sep. 2009 doc u ment no.: s 8 - v -3910.01-001 (4) 17432
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